SI4388DY-T1-GE3
MOSFET 2N-CH 30V 10.7A 8-SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI4388DY-T1-GE3 is a 30V N-channel MOSFET array, part of the TrenchFET® series. This component features a 2 N-channel (half-bridge) configuration, packaged in an 8-SOIC (0.154", 3.90mm width) for surface mounting. It offers a continuous drain current of 10.7A and 11.3A, with a maximum power dissipation of 3.3W and 3.5W. The Rds On is specified at a maximum of 16mOhm at 8A, 10V, and gate charge is 27nC (max) at 10V. Input capacitance (Ciss) is 946pF (max) at 15V. The operating temperature range is -55°C to 150°C (TJ). This device is commonly utilized in power management applications across various industries, including automotive and industrial electronics. The SI4388DY-T1-GE3 is supplied on tape and reel (TR).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.3W, 3.5W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 10.7A, 11.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 946pF @ 15V |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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