SI4388DY-T1-E3
MOSFET 2N-CH 30V 10.7A 8-SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI4388DY-T1-E3 is a 30V, 2 N-Channel power MOSFET array designed for efficient power management applications. This device features a low Rds(on) of 16mOhm at 8A and 10V, facilitating minimal power loss during operation. With continuous drain currents of 10.7A and 11.3A, and maximum power dissipation of 3.3W and 3.5W respectively, it is suitable for demanding power switching tasks. The MOSFET array is housed in an 8-SOIC package, enabling surface mounting and integration into compact designs. Key electrical characteristics include a gate charge of 27nC (max) and input capacitance of 946pF (max), crucial parameters for high-frequency switching performance. The SI4388DY-T1-E3 finds application in power supplies, battery management systems, and motor control circuits across various industrial sectors. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.3W, 3.5W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 10.7A, 11.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 946pF @ 15V |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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