SI4340DY-T1-E3
MOSFET 2N-CH 20V 7.3A 14SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI4340DY-T1-E3 is a dual N-channel MOSFET array packaged in a 14-SOIC surface mount configuration. This device features a 20V Drain-Source voltage (Vdss) and supports continuous drain currents of 7.3A and 9.9A at 25°C. The low on-resistance is rated at 12mOhm maximum at 9.6A and 10V Vgs. Operating with a logic level gate input, the SI4340DY-T1-E3 has a maximum gate charge of 15nC at 4.5V Vgs and a threshold voltage (Vgs(th)) of 2V maximum at 250µA. Maximum power dissipation is 1.14W and 1.43W, with an operating temperature range of -55°C to 150°C. This component is commonly utilized in power management applications across automotive and industrial sectors. The SI4340DY-T1-E3 is supplied on tape and reel.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 14-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.14W, 1.43W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 7.3A, 9.9A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 9.6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 14-SOIC |
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