SI4340CDY-T1-E3
MOSFET 2N-CH 20V 14.1A 14SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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The Vishay Siliconix SI4340CDY-T1-E3 is a TrenchFET® series dual N-channel MOSFET array designed for demanding power applications. This component features a 20V drain-source voltage rating and offers continuous drain currents of 14.1A and 20A, with maximum power dissipation of 3W and 5.4W respectively. The device boasts a low Rds(on) of 9.4mOhm at 11.5A and 10V, alongside a logic-level gate for enhanced drive efficiency. Key parameters include a gate charge of 32nC (max) at 10V and input capacitance of 1300pF (max) at 10V. Packaged in a 14-SOIC (0.154" width) for surface mounting, this component operates within a temperature range of -55°C to 150°C. The SI4340CDY-T1-E3 is suitable for use in automotive and industrial power management systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 14-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3W, 5.4W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 14.1A, 20A |
| Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 10V |
| Rds On (Max) @ Id, Vgs | 9.4mOhm @ 11.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 14-SOIC |
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