SI4330DY-T1-E3
MOSFET 2N-CH 30V 6.6A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® series SI4330DY-T1-E3 is a 2 N-channel MOSFET array with a 30V drain-source voltage rating and a continuous drain current capability of 6.6A at 25°C. This device features a low Rds(on) of 16.5mOhm at 8.7A and 10V, and a logic level gate for enhanced control. With a maximum power dissipation of 1.1W, it is designed for efficient operation. The MOSFET array is housed in an 8-SOIC package suitable for surface mounting, with a high operating temperature range of -55°C to 150°C. The SI4330DY-T1-E3 is commonly utilized in power management applications across industrial and automotive sectors. Supplied on tape and reel (TR).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.6A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 8.7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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