SI4310BDY-T1-E3
MOSFET 2N-CH 30V 7.5A 14SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix SI4310BDY-T1-E3 is a TrenchFET® power MOSFET array featuring two N-channel devices in a 14-SOIC package. This component offers a continuous drain current capability of 7.5A and 9.8A respectively, with a maximum drain-source voltage of 30V. The device boasts a low on-resistance of 11mOhm at 10A with a 10V gate-source voltage. With a logic level gate drive and a maximum gate charge of 18nC at 4.5V, it is suitable for applications requiring efficient switching. Maximum power dissipation is rated at 1.14W and 1.47W. The SI4310BDY-T1-E3 is utilized in industrial and automotive applications where high-density power management is critical. Operating temperature range is from -55°C to 150°C. This device is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 14-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.14W, 1.47W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 7.5A, 9.8A |
| Input Capacitance (Ciss) (Max) @ Vds | 2370pF @ 15V |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 14-SOIC |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
