SI4276DY-T1-GE3
MOSFET 2N-CH 30V 8A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® series 2 N-channel MOSFET array, part number SI4276DY-T1-GE3. This device features a 30V drain-to-source voltage and a continuous drain current of 8A at 25°C. With a low Rds(on) of 15.3mOhm maximum at 9.5A and 10V, it offers efficient power switching. The logic level gate allows for direct control by lower voltage microcontrollers. Input capacitance (Ciss) is 1000pF maximum at 15V, and gate charge (Qg) is 26nC maximum at 10V. This MOSFET array is housed in an 8-SOIC package suitable for surface mounting and operates across a temperature range of -55°C to 150°C. Power dissipation is rated at 3.6W and 2.8W. Applications include power management and switching circuits in automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.6W, 2.8W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 15V |
| Rds On (Max) @ Id, Vgs | 15.3mOhm @ 9.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |