SI4230DY-T1-GE3
MOSFET 2N-CH 30V 8A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® series power MOSFET array, part number SI4230DY-T1-GE3, offers a dual N-channel configuration with a 30V drain-source breakdown voltage. This surface-mount device, housed in an 8-SOIC package, features a continuous drain current capability of 8A at 25°C and a maximum power dissipation of 3.2W. Key parameters include a low Rds(on) of 20.5mOhm at 8A and 10V, a logic level gate for enhanced drive flexibility, and a gate charge of 25nC maximum at 10V. Input capacitance (Ciss) is rated at 950pF maximum at 15V, and the threshold voltage (Vgs(th)) is 3V maximum at 250µA. The device operates across a wide temperature range of -55°C to 150°C. This component is widely utilized in power management applications within the automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Input Capacitance (Ciss) (Max) @ Vds | 950pF @ 15V |
| Rds On (Max) @ Id, Vgs | 20.5mOhm @ 8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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