SI4226DY-T1-GE3
MOSFET 2N-CH 25V 8A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® series SI4226DY-T1-GE3 is a dual N-channel power MOSFET designed for high-efficiency power switching applications. This component features a 25V drain-source voltage (Vdss) and supports a continuous drain current (Id) of 8A at 25°C. The low on-resistance (Rds On) of 19.5mOhm at 7A and 4.5V Vgs ensures minimal conduction losses. With a gate charge (Qg) of 36nC at 10V and input capacitance (Ciss) of 1255pF at 15V, it offers efficient switching characteristics. The device is packaged in an 8-SOIC (0.154", 3.90mm Width) for surface mounting and can operate across a wide temperature range of -55°C to 150°C. This MOSFET is suitable for use in automotive, industrial, and consumer electronics power management systems. It is supplied in tape and reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.2W |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Input Capacitance (Ciss) (Max) @ Vds | 1255pF @ 15V |
| Rds On (Max) @ Id, Vgs | 19.5mOhm @ 7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SOIC |