SI4214DY-T1-GE3
MOSFET 2N-CH 30V 8.5A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI4214DY-T1-GE3 is a dual N-channel MOSFET array designed for efficient power management applications. This component features a 30V drain-to-source voltage (Vdss) and supports a continuous drain current of 8.5A at 25°C. The device offers a low on-resistance (Rds On) of 23.5mOhm maximum at 7A and 10V, contributing to reduced conduction losses. With a maximum power dissipation of 3.1W, it is suitable for thermal management considerations in compact designs. The gate charge (Qg) is 23nC maximum at 10V, and input capacitance (Ciss) is 785pF maximum at 15V. The SI4214DY-T1-GE3 is housed in an 8-SOIC package with surface mount capability and operates across a temperature range of -55°C to 150°C. This MOSFET array finds utility in industrial and automotive sectors requiring robust power switching solutions.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 785pF @ 15V |
| Rds On (Max) @ Id, Vgs | 23.5mOhm @ 7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
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