SI4210DY-T1-GE3
MOSFET 2N-CH 30V 6.5A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI4210DY-T1-GE3 is a TrenchFET® series 30V, 2 N-channel power MOSFET array in an 8-SOIC package. This device offers a continuous drain current of 6.5A at 25°C and a low Rds(on) of 35.5mOhm maximum at 5A, 10V. Featuring a logic-level gate and a maximum power dissipation of 2.7W, it is suitable for applications requiring efficient switching and power management. Key parameters include a gate charge (Qg) of 12nC maximum at 10V and input capacitance (Ciss) of 445pF maximum at 15V. The operating temperature range is -55°C to 150°C. This component finds application in various industries including automotive and industrial power control.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.7W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 445pF @ 15V |
| Rds On (Max) @ Id, Vgs | 35.5mOhm @ 5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
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