SI4200DY-T1-GE3
MOSFET 2N-CH 25V 8A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI4200DY-T1-GE3 is a TrenchFET® series dual N-channel power MOSFET. This component features a 25V drain-source voltage (Vdss) and a continuous drain current (Id) of 8A at 25°C. The device boasts a low on-resistance (Rds On) of 25mOhm maximum at 7.3A and 10V Vgs, and a power dissipation of 2.8W. Its logic level gate is optimized for efficient switching with lower gate drive voltages. Key characteristics include a gate charge (Qg) of 12nC maximum at 10V and input capacitance (Ciss) of 415pF maximum at 13V. The SI4200DY-T1-GE3 is supplied in an 8-SOIC package for surface mounting and operates across a temperature range of -55°C to 150°C. This MOSFET array is suitable for applications in power management, automotive, and industrial systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.8W |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Input Capacitance (Ciss) (Max) @ Vds | 415pF @ 13V |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 7.3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-SOIC |
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