SI3993DV-T1-GE3
MOSFET 2P-CH 30V 1.8A 6TSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® MOSFET Array, part number SI3993DV-T1-GE3, features two P-channel MOSFETs in a single 6-TSOP package. This device offers a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 1.8A per channel at 25°C. The low on-resistance (Rds On) of 133mOhm is specified at 2.2A and 10V Vgs. With a logic level gate, this MOSFET array is suitable for power management applications. Its low gate charge of 5nC at 4.5V Vgs contributes to efficient switching. The device operates across a temperature range of -55°C to 150°C (TJ) and is supplied in a Tape & Reel (TR) package. Applications include power switching and load management in consumer electronics and industrial control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 830mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 1.8A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 133mOhm @ 2.2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 6-TSOP |
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