SI3993DV-T1-E3
MOSFET 2P-CH 30V 1.8A 6TSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI3993DV-T1-E3 is a dual P-channel MOSFET array in a 6-TSOP package. This device features a 30V drain-to-source breakdown voltage and a continuous drain current capability of 1.8A at 25°C. The Rds(on) is specified at a maximum of 133mOhm when conducting 2.2A with a 10V gate-source voltage. With a gate charge (Qg) of 5nC at 4.5V, this MOSFET is well-suited for applications requiring efficient switching. The logic-level gate drive capability simplifies integration with lower voltage control signals. The component’s power dissipation is rated at 830mW, and it operates across a wide temperature range of -55°C to 150°C. This Vishay Siliconix MOSFET array finds application in power management circuits, battery charging, and load switching within portable electronics and automotive systems. Packaged on tape and reel, the SI3993DV-T1-E3 is designed for high-volume surface-mount assembly.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 830mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 1.8A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 133mOhm @ 2.2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 6-TSOP |