SI3983DV-T1-GE3
MOSFET 2P-CH 20V 2.1A 6TSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® series SI3983DV-T1-GE3 is a dual P-channel MOSFET array designed for power management applications. This device features a 20V drain-source voltage rating and a continuous drain current capability of 2.1A per channel at 25°C. The low on-resistance of 110mO at 2.5A and 4.5V (Id, Vgs) minimizes conduction losses. With a logic-level gate, it is suitable for direct interfacing with low-voltage microcontrollers. The 6-TSOP package offers a compact footprint for surface-mount assembly, with a maximum power dissipation of 830mW. Operating temperature range is -55°C to 150°C. This component is commonly utilized in battery management, power switching, and portable electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 830mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.1A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 2.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Supplier Device Package | 6-TSOP |
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