SI3981DV-T1-GE3
MOSFET 2P-CH 20V 1.6A 6TSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI3981DV-T1-GE3 is a P-channel MOSFET array designed for power management applications. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 1.6A at 25°C. With a low Rds(on) of 185mOhm maximum at 1.9A and 4.5V Vgs, it offers efficient switching performance. The logic level gate feature simplifies drive requirements. Housed in a 6-TSOP package, it is suitable for surface mount installations. The SI3981DV-T1-GE3 is commonly employed in consumer electronics, battery management systems, and power supply circuits requiring space-efficient, high-performance switching. Its operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 800mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 185mOhm @ 1.9A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Supplier Device Package | 6-TSOP |
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