SI3981DV-T1-E3
MOSFET 2P-CH 20V 1.6A 6TSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI3981DV-T1-E3 is a TrenchFET® power MOSFET array featuring two P-channel, 20V enhancement mode transistors. This device offers a continuous drain current capability of 1.6A at 25°C and a maximum on-resistance of 185mOhm at 1.9A and 4.5V Vgs. With a logic level gate, it is suitable for low-voltage applications. The SI3981DV-T1-E3 is housed in a compact 6-TSOP (SOT-23-6 Thin) package, designed for surface mounting. It dissipates a maximum of 800mW and operates across an extended temperature range of -55°C to 150°C. This component finds utility in power management, battery charging, and load switching applications within consumer electronics and industrial systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 800mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 185mOhm @ 1.9A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Supplier Device Package | 6-TSOP |
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