SI3951DV-T1-E3
MOSFET 2P-CH 20V 2.7A 6TSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI3951DV-T1-E3 is a 20V dual P-channel MOSFET array packaged in a compact 6-TSOP. This device features a continuous drain current (Id) capability of 2.7A at 25°C and a maximum power dissipation of 2W. The low Rds(on) of 115mOhm at 2.5A and 4.5V, coupled with a logic level gate, makes it suitable for various power management applications. Key parameters include a gate charge (Qg) of 5.1nC (max) at 5V and input capacitance (Ciss) of 250pF (max) at 10V. The operating temperature range is -55°C to 150°C. This component finds application in computing, industrial, and consumer electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.7A |
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 10V |
| Rds On (Max) @ Id, Vgs | 115mOhm @ 2.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 5.1nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 6-TSOP |
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