SI3948DV-T1-E3
MOSFET 2N-CH 30V 6TSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The Vishay Siliconix SI3948DV-T1-E3 is a TrenchFET® series power MOSFET featuring two N-channel devices in a 6-TSOP package. This dual MOSFET offers a 30V drain-to-source voltage capability and a maximum continuous drain current capability of 2.5A with a low Rds(on) of 105mOhm at 2.5A and 10V. Designed for efficiency, it incorporates a logic-level gate for compatibility with lower voltage drive signals, achieving a gate charge of 3.2nC at 5V. The device dissipates up to 1.15W and operates across a temperature range of -55°C to 150°C. Its surface mount configuration and SOT-23-6 Thin, TSOT-23-6 package are suitable for applications in consumer electronics and industrial power management. Supplied on tape and reel (TR).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.15W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 2.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 3.2nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | 6-TSOP |
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