SI3911DV-T1-E3
MOSFET 2P-CH 20V 1.8A 6TSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI3911DV-T1-E3 is a 2 P-channel MOSFET array designed for surface mount applications. This component offers a continuous drain current of 1.8A and a drain-to-source voltage of 20V. Featuring logic level gate operation, it exhibits a maximum Rds(On) of 145mOhm at 2.2A and 4.5V. The device has a maximum power dissipation of 830mW and a gate charge of 7.5nC at 4.5V. Supplied in a 6-TSOP package, this Vishay Siliconix MOSFET array is suitable for use in portable electronics and power management circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 830mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.8A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 145mOhm @ 2.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Supplier Device Package | 6-TSOP |
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