SI3909DV-T1-GE3
MOSFET 2P-CH 20V 6TSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix SI3909DV-T1-GE3 is a TrenchFET® series 2 P-channel MOSFET array in a 6-TSOP package. This surface mount component features a Drain-to-Source Voltage (Vdss) of 20V and a maximum continuous drain current (Id) of 1.8A at 25°C, with a low Rds(on) of 200mOhm at 4.5V Vgs. The device offers a logic level gate with a gate charge (Qg) of 4nC at 4.5V and a threshold voltage (Vgs(th)) of 500mV. With a maximum power dissipation of 1.15W and an operating temperature range of -55°C to 150°C, this MOSFET array is suitable for applications in consumer electronics and industrial power management. The part is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.15W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 1.8A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 500mV @ 250µA (Min) |
| Supplier Device Package | 6-TSOP |
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