SI3900DV-T1-GE3
MOSFET 2N-CH 20V 2A 6TSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® series SI3900DV-T1-GE3 is a dual N-channel MOSFET array in a 6-TSOP package. This device features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 2A at 25°C. The low on-resistance is specified at 125mOhm maximum at 2.4A drain current and 4.5V gate-source voltage. With a logic level gate, it offers a gate charge (Qg) of 4nC maximum at 4.5V. The power dissipation is rated at 830mW. This component is suitable for applications in consumer electronics and power management. It is supplied on tape and reel.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 830mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 2.4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 6-TSOP |
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