SI3850ADV-T1-GE3
MOSFET N/P-CH 20V 1.4A 6-TSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix SI3850ADV-T1-GE3 TrenchFET® MOSFET array featuring N and P-channel transistors in a single 6-TSOP package. This device offers a 20V drain-source voltage rating with continuous drain currents of 1.4A for the N-channel and 960mA for the P-channel at 25°C. The array boasts a low Rds(on) of 300mOhm maximum at 500mA, 4.5V Vgs, and a logic level gate for efficient switching. With a gate charge of 1.4nC maximum at 4.5V Vgs, it is suitable for power switching applications in consumer electronics and industrial automation. The component operates across a temperature range of -55°C to 150°C and is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel, Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.08W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.4A, 960mA |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 500mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.4nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 6-TSOP |