SI3850ADV-T1-E3
MOSFET N/P-CH 20V 1.4A 6TSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI3850ADV-T1-E3 is a 20V N-channel and P-channel MOSFET array in a 6-TSOP package. This device features a common drain configuration and offers a continuous drain current of 1.4A for the N-channel and 960mA for the P-channel, both at 25°C. With a low on-resistance of 300mOhm maximum at 500mA and 4.5V Vgs, and a logic-level gate, it is suitable for power management applications. The maximum power dissipation is 1.08W. This component is commonly utilized in consumer electronics and industrial automation. The device is supplied in tape and reel.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel, Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.08W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.4A, 960mA |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 500mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.4nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 6-TSOP |
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