SI3590DV-T1-GE3
MOSFET N/P-CH 30V 2.5A 6TSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The Vishay Siliconix SI3590DV-T1-GE3 is a TrenchFET® MOSFET array featuring N-channel and P-channel configurations within a single 6-TSOP package. This device offers a 30V drain-to-source voltage (Vdss) and supports continuous drain currents of 2.5A for the N-channel and 1.7A for the P-channel at 25°C. The N-channel MOSFET exhibits a low Rds(on) of 77mOhm maximum at 3A and 4.5V Vgs, and its logic level gate design facilitates lower drive voltages. With a maximum power dissipation of 830mW and an operating temperature range of -55°C to 150°C, it is suitable for power management applications in industries such as consumer electronics and industrial automation. The component is supplied in a tape and reel (TR) package.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 830mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A, 1.7A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 77mOhm @ 3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 4.5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 6-TSOP |
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