SI3590DV-T1-E3

MOSFET N/P-CH 30V 2.5A 6TSOP

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Vishay Siliconix TrenchFET® MOSFET Array SI3590DV-T1-E3. This N-channel and P-channel device features a 30V drain-to-source voltage rating. The continuous drain current is specified at 2.5A for the N-channel and 1.7A for the P-channel, both at 25°C. With a maximum on-resistance of 77mOhm at 3A and 4.5V, this component is designed for efficient power switching applications. The logic-level gate, characterized by a gate threshold voltage of 1.5V at 250µA and a maximum gate charge of 4.5nC at 4.5V, ensures compatibility with low-voltage control signals. The 6-TSOP package facilitates compact surface mounting, suitable for power management in consumer electronics and industrial automation. This device operates within a temperature range of -55°C to 150°C.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Last Time BuyPackaging: Cut Tape (CT)Datasheet:

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Technical Details:

Packaging	Cut Tape (CT)
Package / Case	SOT-23-6 Thin, TSOT-23-6
Mounting Type	Surface Mount
Configuration	N and P-Channel
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
Power - Max	830mW
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	2.5A, 1.7A
Input Capacitance (Ciss) (Max) @ Vds	-
Rds On (Max) @ Id, Vgs	77mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs	4.5nC @ 4.5V
FET Feature	Logic Level Gate
Vgs(th) (Max) @ Id	1.5V @ 250µA
Supplier Device Package	6-TSOP