SI3588DV-T1-GE3
MOSFET N/P-CH 20V 2.5A 6-TSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI3588DV-T1-GE3 is a TrenchFET® series N-channel and P-channel MOSFET array in a 6-TSOP package. This device features a Drain to Source Voltage (Vdss) of 20V. The N-channel offers a continuous drain current (Id) of 2.5A at 25°C with a maximum Rds(On) of 80mOhm @ 3A, 4.5V. The P-channel provides a continuous drain current (Id) of 570mA at 25°C. It supports logic level gate operation and has a typical gate charge (Qg) of 7.5nC @ 4.5V. The maximum power dissipation is rated at 830mW for the N-channel and 83mW for the P-channel. This component is suitable for mounting on a surface and operates across a temperature range of -55°C to 150°C. This MOSFET array finds applications in power management and switching circuits within automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 830mW, 83mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A, 570mA |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Supplier Device Package | 6-TSOP |
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