SI3586DV-T1-GE3
MOSFET N/P-CH 20V 2.9A 6TSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® MOSFET Array, part number SI3586DV-T1-GE3, offers a dual N-channel and P-channel configuration. This device features a 20V drain-source voltage rating and continuous drain currents of 2.9A for the N-channel and 2.1A for the P-channel, respectively, at 25°C. With a maximum power dissipation of 830mW and a low Rds(On) of 60mOhm at 3.4A and 4.5V Vgs, it is suitable for power management applications. The logic level gate feature and a Vgs(th) of 1.1V at 250µA allow for low-voltage drive. This surface mount component, supplied in a 6-TSOP package and available on tape and reel, operates across a temperature range of -55°C to 150°C. Its efficient design makes it valuable in battery-powered devices and portable electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 830mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A, 2.1A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 3.4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Supplier Device Package | 6-TSOP |