SI3585DV-T1-GE3
MOSFET N/P-CH 20V 2A/1.5A 6TSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI3585DV-T1-GE3 is a TrenchFET® series MOSFET array featuring N and P-channel configuration. This device offers a 20V drain-to-source voltage (Vdss) and continuous drain current (Id) ratings of 2A for the N-channel and 1.5A for the P-channel, both specified at 25°C. With a maximum on-resistance (Rds On) of 125mOhm at 2.4A and 4.5V, it provides efficient switching. The logic level gate feature simplifies drive requirements. The component is supplied in a 6-TSOP package, suitable for surface mounting. Maximum power dissipation is 830mW. This MOSFET array finds application in power management and battery-powered electronic devices.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 830mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2A, 1.5A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 2.4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 3.2nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
| Supplier Device Package | 6-TSOP |
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