SI3585DV-T1-E3
MOSFET N/P-CH 20V 2A/1.5A 6TSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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The Vishay Siliconix SI3585DV-T1-E3 is a TrenchFET® power MOSFET array featuring complementary N-channel and P-channel devices. This SOT-23-6 Thin packaged component offers a 20V drain-source voltage rating. The N-channel MOSFET supports a continuous drain current of 2A at 25°C with a maximum on-resistance of 125mOhm at 2.4A and 4.5V Vgs. The P-channel MOSFET is rated for 1.5A continuous drain current with a similar on-resistance characteristic. Designed with a logic level gate, this array is suitable for applications requiring efficient power switching in compact footprints, commonly found in consumer electronics and battery management systems. The device operates across a temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 830mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2A, 1.5A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 2.4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 3.2nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
| Supplier Device Package | 6-TSOP |
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