SI3529DV-T1-GE3
MOSFET N/P-CH 40V 2.5A 6TSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI3529DV-T1-GE3 is a MOSFET array featuring N-channel and P-channel configurations. This device offers a continuous drain current of 2.5A for the N-channel and 1.95A for the P-channel, with a drain-to-source voltage (Vdss) of 40V. The MOSFET array is designed with a logic level gate, a maximum power dissipation of 1.4W, and a low on-resistance of 125mOhm at 2.2A and 10V. Key parameters include a gate charge (Qg) of 7nC at 10V and input capacitance (Ciss) of 205pF at 20V. The operating temperature ranges from -55°C to 150°C. This component is housed in a 6-TSOP surface mount package and is supplied on tape and reel. Applications for this Vishay Siliconix MOSFET array include power management, battery charging, and general-purpose switching in computing and consumer electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A, 1.95A |
| Input Capacitance (Ciss) (Max) @ Vds | 205pF @ 20V |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 2.2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 6-TSOP |
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