SI1988DH-T1-GE3
MOSFET 2N-CH 20V 1.3A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI1988DH-T1-GE3, a TrenchFET® series MOSFET array, features two independent N-channel depletion mode MOSFETs in a compact SC-70-6 package. This device offers a 20V drain-source voltage and a continuous drain current capability of 1.3A per channel at 25°C. The low gate threshold voltage of 1V at 250µA and logic-level gate drive enable efficient operation with low-voltage control signals. With a maximum on-resistance of 168mOhm at 1.4A and 4.5V, and a low gate charge of 4.1nC, this MOSFET array is suitable for power management applications in consumer electronics and battery-powered devices. The surface mount configuration and a maximum power dissipation of 1.25W complement its utility in space-constrained designs. Operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.25W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 110pF @ 10V |
| Rds On (Max) @ Id, Vgs | 168mOhm @ 1.4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 4.1nC @ 8V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SC-70-6 |
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