SI1972DH-T1-GE3
MOSFET 2N-CH 30V 1.3A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI1972DH-T1-GE3 is a dual N-channel MOSFET array designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 1.3A at 25°C. The device exhibits a low on-resistance (Rds On) of 225mOhm maximum at 1.3A and 10V, contributing to reduced conduction losses. With a gate charge (Qg) of 2.8nC maximum at 10V and input capacitance (Ciss) of 75pF maximum at 15V, it is suitable for high-frequency switching. The MOSFET array is housed in a compact SC-70-6 (SOT-363) surface-mount package, rated for a maximum power dissipation of 1.25W and operating temperatures from -55°C to 150°C. This Vishay Siliconix TrenchFET® MOSFET array finds application in portable electronics and power management circuits.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.25W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 1.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 75pF @ 15V |
| Rds On (Max) @ Id, Vgs | 225mOhm @ 1.3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 2.8nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Supplier Device Package | SC-70-6 |
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