SI1972DH-T1-E3
MOSFET 2N-CH 30V 1.3A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® series dual N-channel MOSFET, part number SI1972DH-T1-E3. This device offers 30V drain-to-source voltage and a continuous drain current capability of 1.3A at 25°C. Featuring a low Rds(on) of 225mOhm at 1.3A and 10V Vgs, it is designed for efficient power switching. The SC-70-6 package provides a compact surface mount solution. Key electrical parameters include a gate charge of 2.8nC (max) and input capacitance of 75pF (max). With a maximum power dissipation of 1.25W and an operating temperature range of -55°C to 150°C, this MOSFET array is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.25W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 1.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 75pF @ 15V |
| Rds On (Max) @ Id, Vgs | 225mOhm @ 1.3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 2.8nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Supplier Device Package | SC-70-6 |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
