SI1970DH-T1-GE3
MOSFET 2N-CH 30V 1.3A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI1970DH-T1-GE3 is a dual N-channel MOSFET array designed for high-efficiency power management. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 1.3A at 25°C. The low Rds(on) of 225mOhm maximum at 1.2A and 4.5V Vgs, combined with a logic-level gate, ensures superior performance in low-voltage applications. Its compact SC-70-6 (SOT-363) surface-mount package and 1.25W maximum power dissipation make it suitable for space-constrained designs. Key parameters include a gate charge (Qg) of 3.8nC maximum at 10V and input capacitance (Ciss) of 95pF maximum at 15V. This component finds application in consumer electronics and industrial control systems. The device is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.25W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 1.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 95pF @ 15V |
| Rds On (Max) @ Id, Vgs | 225mOhm @ 1.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 3.8nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.6V @ 250µA |
| Supplier Device Package | SC-70-6 |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
