SI1958DH-T1-E3
MOSFET 2N-CH 20V 1.3A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI1958DH-T1-E3 is a TrenchFET® series dual N-channel MOSFET array. This component features a 20V drain-source voltage rating and a continuous drain current capability of 1.3A at 25°C. The device offers a low on-resistance of 205mOhm maximum at 1.3A and 4.5V Vgs, and a logic level gate for efficient drive. With a maximum power dissipation of 1.25W and a gate charge of 3.8nC at 10V, this MOSFET array is suitable for applications requiring efficient switching. The SI1958DH-T1-E3 is housed in a compact SC-70-6 (SOT-363) surface-mount package, supplied on tape and reel. Its operating temperature range is -55°C to 150°C. This component is utilized in various industries including industrial automation, consumer electronics, and communications infrastructure.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.25W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 105pF @ 10V |
| Rds On (Max) @ Id, Vgs | 205mOhm @ 1.3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 3.8nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.6V @ 250µA |
| Supplier Device Package | SC-70-6 |
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