SI1926DL-T1-GE3
MOSFET 2N-CH 60V 0.37A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI1926DL-T1-GE3 is a dual N-channel MOSFET array designed for high-density power management applications. This device features a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 370mA at 25°C. The MOSFET array offers a low on-resistance of 1.4Ohm maximum at 340mA and 10V Vgs, with a logic level gate feature. The SC-70-6 (SOT-363) package facilitates surface mounting, and the component is supplied in tape and reel (TR). Key parameters include a gate charge (Qg) of 1.4nC maximum at 10V and an input capacitance (Ciss) of 18.5pF maximum at 30V. The maximum power dissipation is 510mW, and it operates within an ambient temperature range of -55°C to 150°C. This component is utilized in automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 510mW |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 370mA |
| Input Capacitance (Ciss) (Max) @ Vds | 18.5pF @ 30V |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 340mA, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 1.4nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SC-70-6 |