SI1926DL-T1-BE3
MOSFET 2N-CH 60V 0.34A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI1926DL-T1-BE3 is a dual N-channel MOSFET array designed for efficient switching applications. This component features a 60V drain-source breakdown voltage and offers a continuous drain current of 340mA at 25°C ambient temperature and 370mA under typical case conditions. With a maximum power dissipation of 300mW (ambient) and 510mW (case), it is housed in a compact SC-70-6 package, suitable for surface mounting. Key electrical parameters include a 1.4nC maximum gate charge and 18.5pF input capacitance. The on-resistance (Rds On) is specified at 1.4 Ohms maximum at a drain current of 340mA and gate-source voltage of 10V. This device operates across a wide temperature range of -55°C to 150°C. The Vishay Siliconix SI1926DL-T1-BE3 is utilized in various industries including consumer electronics and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: unknownManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 300mW (Ta), 510mW (Tc) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 340mA (Ta), 370mA (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 18.5pF @ 30V |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 340mA, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 1.4nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SC-70-6 |
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