SI1917EDH-T1-E3
MOSFET 2P-CH 12V 1A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI1917EDH-T1-E3 is a 2 P-Channel MOSFET array featuring a 12V drain-source voltage and 1A continuous drain current. This device offers a low on-resistance of 370mOhm at 1A and 4.5V Vgs, with a maximum power dissipation of 570mW. The logic-level gate input is optimized for efficient switching with a gate charge of 2nC at 4.5V. Packaged in a compact SC-70-6 (SOT-363) surface-mount case, this component is well-suited for applications requiring compact power management solutions in portable electronics and power supply designs. The operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 570mW |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 1A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 370mOhm @ 1A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 2nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 450mV @ 100µA (Min) |
| Supplier Device Package | SC-70-6 |
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