SI1913EDH-T1-E3
MOSFET 2P-CH 20V 0.88A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI1913EDH-T1-E3 is a dual P-channel MOSFET array designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 880mA at 25°C. With a maximum on-resistance (Rds On) of 490mOhm at 880mA and 4.5V, and a low gate charge of 1.8nC at 4.5V, it offers optimized performance for battery-powered devices and portable electronics. The SC-70-6 package facilitates compact designs, while the logic-level gate ensures compatibility with low-voltage control signals. This device is suitable for various applications including power management in consumer electronics, industrial control systems, and automotive electronics. The maximum power dissipation is 570mW, and it operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 570mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 880mA |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 490mOhm @ 880mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.8nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 450mV @ 100µA |
| Supplier Device Package | SC-70-6 |
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