SI1913DH-T1-E3
MOSFET 2P-CH 20V 0.88A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® MOSFET array, part number SI1913DH-T1-E3, features two P-channel MOSFETs in a 6-TSSOP, SC-88, SOT-363 package. This device offers a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 880mA at 25°C. The Rds(On) is a maximum of 490mOhm at 880mA, 4.5V, with a logic level gate for efficient drive. Gate charge (Qg) is 1.8nC maximum at 4.5V. Power dissipation is rated at 570mW. The SI1913DH-T1-E3 is commonly employed in battery management, power switching, and portable electronics applications. It is supplied in tape and reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 570mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 880mA |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 490mOhm @ 880mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.8nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 100µA |
| Supplier Device Package | SC-70-6 |
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