SI1912EDH-T1-E3
MOSFET 2N-CH 20V 1.13A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI1912EDH-T1-E3 is a dual N-channel MOSFET array designed for surface-mount applications. This component features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 1.13A at 25°C. The device offers a low Rds(on) of 280mOhm maximum at 1.13A and 4.5V Vgs, with a gate charge Qg of 1nC maximum at 4.5V. Its logic-level gate functionality simplifies drive requirements. The power dissipation is rated at 570mW, and it operates within an industrial temperature range of -55°C to 150°C. The compact SC-70-6 (SOT-363) package is suitable for space-constrained designs in automotive and industrial systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 570mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.13A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 1.13A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 450mV @ 100µA (Min) |
| Supplier Device Package | SC-70-6 |
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