SI1905DL-T1-E3
MOSFET 2P-CH 8V 0.57A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI1905DL-T1-E3 is a dual P-channel MOSFET array designed for various demanding applications. This surface-mount device features an 8V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 570mA at 25°C. With a low Rds(On) of 600mOhm at 570mA and 4.5V Vgs, it offers efficient power handling. The logic level gate feature and a typical gate charge of 2.3nC at 4.5V facilitate low-voltage operation. The component is housed in a compact SC-70-6 (SOT-363) package and operates across a temperature range of -55°C to 150°C. This MOSFET array is commonly utilized in portable electronics, battery management, and power switching circuits.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 270mW |
| Drain to Source Voltage (Vdss) | 8V |
| Current - Continuous Drain (Id) @ 25°C | 570mA |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 570mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.3nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Supplier Device Package | SC-70-6 |
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