SI1905BDH-T1-E3
MOSFET 2P-CH 8V 0.63A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI1905BDH-T1-E3 is a dual P-channel MOSFET array designed for switching applications. This device features a 8V drain-source voltage (Vdss) and a continuous drain current (Id) of 630mA at 25°C. The on-resistance (Rds On) is specified at a maximum of 542mOhm at 580mA and 4.5V gate-source voltage (Vgs). With a logic level gate, it offers efficient drive characteristics. The SI1905BDH-T1-E3 is packaged in an SC-70-6 (SOT-363) surface mount configuration and is supplied on tape and reel. Key parameters include a gate charge (Qg) of 1.5nC maximum at 4.5V and input capacitance (Ciss) of 62pF maximum at 4V. This MOSFET array is suitable for use in consumer electronics, portable devices, and power management circuits.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 357mW |
| Drain to Source Voltage (Vdss) | 8V |
| Current - Continuous Drain (Id) @ 25°C | 630mA |
| Input Capacitance (Ciss) (Max) @ Vds | 62pF @ 4V |
| Rds On (Max) @ Id, Vgs | 542mOhm @ 580mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SC-70-6 |
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