SI1903DL-T1-GE3
MOSFET 2P-CH 20V 0.41A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI1903DL-T1-GE3 is a TrenchFET® series dual P-channel MOSFET array. This component features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 410mA at 25°C. The device exhibits a maximum on-resistance (Rds On) of 995mOhm at 410mA drain current and 4.5V gate-source voltage. With a logic level gate feature and a maximum power dissipation of 270mW, this MOSFET array is suitable for applications requiring efficient switching and power management. The SC-70-6 package facilitates surface mounting, and the device operates across a temperature range of -55°C to 150°C. Typical industries utilizing this component include consumer electronics and industrial control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 270mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 410mA |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 995mOhm @ 410mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.8nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SC-70-6 |
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