SI1903DL-T1-E3
MOSFET 2P-CH 20V 0.41A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI1903DL-T1-E3 is a dual P-channel MOSFET array designed for surface-mount applications. This component features a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 410mA at 25°C. The device offers a low Rds(on) of 995mOhm maximum at 410mA and 4.5V, coupled with a gate charge (Qg) of 1.8nC maximum at 4.5V. Its logic-level gate capability ensures efficient operation with lower gate drive voltages. The power dissipation is rated at 270mW. Packaged in an SC-70-6 (6-TSSOP, SC-88, SOT-363) configuration and supplied in tape and reel, this MOSFET array is suitable for use in various industrial and consumer electronics, including power management and battery-operated devices. The threshold voltage (Vgs(th)) is a maximum of 1.5V at 250µA, and it operates within a temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 270mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 410mA |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 995mOhm @ 410mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.8nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SC-70-6 |
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