SI1902DL-T1-BE3
MOSFET 2N-CH 20V 0.66A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® series MOSFET array, part number SI1902DL-T1-BE3, features two N-channel devices in a 6-TSSOP, SC-88, SOT-363 package. This surface mount component offers a 20V drain-to-source voltage and a continuous drain current of 660mA at 25°C. The ON-resistance (Rds On) is specified at a maximum of 385mOhm at 660mA and 4.5V Vgs. With a gate charge of 1.2nC (max) at 4.5V and a threshold voltage of 1.5V (max) at 250µA, this MOSFET array is suitable for power management applications in consumer electronics and industrial automation. The device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 270mW. Supplied in tape and reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: unknownManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 270mW (Ta) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 660mA (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 385mOhm @ 660mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.2nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SC-70-6 |
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