SI1563EDH-T1-GE3
MOSFET N/P-CH 20V 1.13A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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The Vishay Siliconix SI1563EDH-T1-GE3 is a TrenchFET® MOSFET array featuring complementary N-channel and P-channel transistors. This device offers a 20V drain-source voltage rating and handles a continuous drain current of 1.13A for the N-channel and 880mA for the P-channel at 25°C. With a maximum on-resistance of 280mOhm at 1.13A and 4.5V Vgs, it is designed for efficient switching applications. The logic-level gate feature simplifies drive requirements. Housed in a compact SC-70-6 (SC-88) surface-mount package, this component dissipates up to 570mW. Its optimized design makes it suitable for power management in portable electronics and battery-powered devices. The SI1563EDH-T1-GE3 operates across an extended temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 570mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.13A, 880mA |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 1.13A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 100µA |
| Supplier Device Package | SC-70-6 |
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