SI1563EDH-T1-E3
MOSFET N/P-CH 20V 1.13A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® MOSFET array, part number SI1563EDH-T1-E3, offers a dual N-channel and P-channel configuration in a 20V breakdown voltage rating. This device features a logic-level gate and a maximum continuous drain current of 1.13A for the N-channel and 880mA for the P-channel, both at 25°C ambient. The low Rds(on) of 280mOhm at 1.13A and 4.5V gate-source voltage, combined with a maximum power dissipation of 570mW, makes it suitable for space-constrained applications. With a gate charge of 1nC at 4.5V, the SI1563EDH-T1-E3 is designed for efficient switching. The SC-70-6 package facilitates surface mounting and is supplied on tape and reel (TR). This component finds application in various industries including consumer electronics and industrial automation power management. The operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 570mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.13A, 880mA |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 1.13A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 100µA |
| Supplier Device Package | SC-70-6 |
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