SI1563DH-T1-GE3
MOSFET N/P-CH 20V 1.13A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® MOSFET Array, part number SI1563DH-T1-GE3, offers a complementary N-channel and P-channel configuration in a compact SC-70-6 package. This device features a 20V drain-source voltage rating and continuous drain current capabilities of 1.13A for the N-channel and 880mA for the P-channel, respectively. The low gate charge of 2nC (max) at 4.5V, coupled with a logic-level gate feature, facilitates efficient switching with lower gate drive voltages. With a maximum Rds(On) of 280mOhm at 1.13A and 4.5V, this MOSFET array is suitable for power management applications. The device operates within a temperature range of -55°C to 150°C (TJ) and dissipates a maximum power of 570mW. This component finds application in consumer electronics, industrial automation, and automotive systems. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 570mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.13A, 880mA |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 1.13A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 2nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 100µA |
| Supplier Device Package | SC-70-6 |